US 11,637,219 B2 · Monolithic integration of different light emitting structures on a same substrate

Abstract

The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.

Claims47

Dependent claims

A device for light generation, comprising:

a substrate having one or more buffer layers that are made at least in part of a material that includes gallium nitride (GaN);
a plurality of light emitting structures formed from an epitaxial layer on a surface of a top one of the one or more buffer layers, each of the plurality of light emitting structures having an active area parallel to the surface and laterally terminated, and the active area of the plurality of light emitting structures being configured to directly generate a color of light;
at least one trench defined in the one or more buffer layers to isolate at a portion of the plurality of light emitting structures;
a p-doped layer disposed over the active area of each of the plurality of light emitting structures and made at least in part of a p-doped material that includes GaN;
and
a single contact metal configured to be electrically connected to a backplane and configured to drive the plurality of light emitting structures via the backplane, the single contact metal being disposed in the at least one trench.

3 more elements

Dependencies are inferred from the claim text.

Monolithic integration of different light emitting structures on a same substrate

Life of this patent

Monolithic integration of different light emitting structures on a same substrate

Life of this patent

Abstract

Claims47