Pin/pin stacked photodetection film and photodetection display apparatus

A photodetection film comprising:

• at least one lower photodiode layered member including a lower first-type semiconductor layer, a lower intrinsic semiconductor layer that is disposed on said lower first-type semiconductor layer, and a lower second-type semiconductor layer that is disposed on said lower intrinsic semiconductor layer;
• and
• at least one upper photodiode layered member disposed on said at least one lower photodiode layered member, and including an upper first-type semiconductor layer that is disposed on said lower second-type semiconductor layer of said at least one lower photodiode layered member, an upper intrinsic semiconductor layer that is disposed on said upper first-type semiconductor layer, and an upper second-type semiconductor layer that is disposed on said upper intrinsic semiconductor layer,
• wherein each of said lower and upper second-type semiconductor layers is one of a p-type semiconductor layer and an n-type semiconductor layer, each of said lower and upper first-type semiconductor layers being the other one of the p-type semiconductor layer and the n-type semiconductor layer;
• wherein said upper intrinsic semiconductor layer has an amorphous silicon structure, said lower intrinsic semiconductor layer having a structure selected from one of a microcrystalline silicon structure, a microcrystalline silicon-germanium structure, and a non-crystalline silicon-germanium structure;
• and
• wherein said photodetection film further includes an upper optical film that is immediately disposed on said upper second-type semiconductor layer of said upper photodiode layered member for reducing an amount of reflection of light from a top surface of said upper second-type semiconductor layer or a refraction angle of light in said upper second-type semiconductor layer, said upper optical film being made from an oxygen-containing compound selected from a group consisting of silicon oxide having a formula of SiOx, x being not less than 1, niobium pentaoxide (Nb2O5), zinc oxide (ZnO), indium tin oxide (ITO), titanium dioxide (TiO2), aluminum-doped zinc oxide (AZO), indium gallium zinc oxide (IGZO), tin dioxide (SnO2), fluorine-doped tin oxide (FTO) and combinations thereof.

A method of making a photodetection film comprising:

• forming a lower photodiode layered member on a substrate, which includes forming a lower first-type semiconductor layer on the substrate, forming a lower intrinsic semiconductor layer on the lower first-type semiconductor layer, and forming a lower second-type semiconductor layer on the lower intrinsic semiconductor layer;
• forming an upper photodiode layered member on the lower photodiode layered member, which includes forming an upper first-type semiconductor layer on the lower second-type semiconductor layer of the lower photodiode layered member, forming an upper intrinsic semiconductor layer on the upper first-type semiconductor layer, and forming an upper second-type semiconductor layer on the upper intrinsic semiconductor layer;
• and
• forming an upper optical film on the upper second-type semiconductor layer of the upper photodiode layered member for reducing an amount of reflection of light from a top surface of the upper second-type semiconductor layer or a refraction angle of light in the upper second-type semiconductor layer,
• wherein each of the lower and upper second-type semiconductor layers is formed into one of a p-type semiconductor layer and an n-type semiconductor layer, each of the lower and upper first-type semiconductor layers being formed into the other one of the p-type semiconductor layer and the n-type semiconductor layer;
• wherein the upper intrinsic semiconductor layer has an amorphous silicon structure, the lower intrinsic semiconductor layer having a structure selected from a microcrystalline silicon structure, a microcrystalline silicon-germanium structure, and a non-crystalline silicon-germanium structure;
• and
• wherein the upper optical film has a structure selected from one of a photonic crystal structure with a refractive index varied periodically, a microlens array structure with a refractive index varied periodically, an incident light-scattered crystal structure with a refractive index varied non-periodically, and an incident light-diffused crystal structure with a refractive index varied non-periodically, the upper optical film having a refractive index smaller than that of the upper second-type semiconductor layer.