Temperature insensitive optical receiver

A photodiode comprising:

• a highly doped n+ Si region;
• an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm;
• a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm;
• and
• a p+ Ge absorption region disposed on at least a portion of the p− Si charge region,
• wherein the p+ Ge absorption region is doped across its entire thickness, and
• wherein the p+ Ge absorption region confines an electric field of the photodiode to the intrinsic silicon multiplication region and the p− Si charge region to achieve a temperature stability of about 4.2 mV/° C.

An integrated photonics receiver for an optical communication system, the receiver comprising:

• an optical coupler to couple received light to the receiver;
• a demultiplexer coupled to the optical coupler to demultiplex the received light into a plurality of channels;
• a plurality of photodiodes coupled to the demultiplexer, each photodiode of the plurality of photodiodes comprising:
• a highly doped n+ Si region;
• an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm;
• a highly doped p+ Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm;
• and
• a p+ Ge absorption region disposed on at least a portion of the p+ Si charge region,
• wherein the p+ Ge absorption region is doped across its entire thickness, and
• wherein the p+ Ge absorption region confines an electric field of the photodiode to the intrinsic silicon multiplication region and the p− Si charge region to achieve a temperature stability of about 4.2 mV/°C.