Semiconductor device and manufacturing method of the same

A semiconductor device, comprising:

• a ferroelectric field-effect transistor (FeFET) comprising:
• a gate electrode;
• a channel layer on the gate electrode;
• a ferroelectric layer located between the channel layer and the gate electrode;
• a first source/drain region and a second source/drain region on the channel layer at opposite sides of the gate electrode;
• and
• a pair of first spacers on the channel layer, wherein the first source/drain region is stacked on the gate electrode in a first direction, the first source/drain region is disposed between the pair of first spacers, and an extended portion of the first source/drain region is disposed on the pair of first spacers in the first direction.

A manufacturing method of a semiconductor device, comprising:

• forming a gate dielectric layer on a gate electrode;
• forming a channel layer on the gate dielectric layer;
• forming a dielectric layer on the channel layer, the dielectric layer comprising a first opening and a second opening at opposite sides of the gate electrode;
• forming a spacer layer on exposed surfaces of the first and second openings over the channel layer;
• partially removing the spacer layer, to form a pair of first spacers on opposite sidewalls of the first opening and a second pair of spacers on opposite sidewalls of the second opening;
• and
• forming a first source/drain region and a second source/drain region in the first opening and the second opening respectively, wherein the first source/drain region is stacked on the gate electrode in a first direction, the first source/drain region is disposed between the pair of first spacers, and an extended portion of the first source/drain region is disposed on the pair of first spacers in the first direction.