Method for fabricating semiconductor device with programmable element
AssigneeNanya Technology Corporation
InventorChang-Chieh Lin
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Abstract
The present application discloses a method for fabricating a semiconductor device The method includes providing a substrate; forming a channel region in the substrate; forming a gate dielectric layer on the channel region; forming a gate bottom conductive layer on the gate dielectric layer; forming first impurity regions on two ends of the channel region; forming first contacts on the first impurity regions; forming programmable insulating layers on the first contacts; forming a gate via on the gate bottom conductive layer; and forming a top conductive layer on the gate via and the programmable insulating layers.
Claims11
A method for fabricating a semiconductor device, comprising the steps of:
- (a) providing a substrate defining a channel region therein;
- (b) forming a gate bottom conductive layer above the channel region of the substrate and forming first impurity regions positioned in the substrate and respectively positioned on two ends of the channel region;
- (c) disposing at least two first contacts on the first impurity regions of the substrate, wherein the first contacts are spaced apart from each other;
- (d) forming programmable insulating layers on the first contacts respectively and are adapted to be ruptured when a programming voltage is applied during a programming procedure of the semiconductor device, wherein the programmable insulating layers are made of a material selected from a group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, aluminum oxide, and a combination thereof;
- (e) forming a gate via on the gate bottom conductive layer;
- and
- (f) forming a top conductive layer on the gate via and the programmable insulating layers.
Dependencies are inferred from the claim text.