Insulated gated field effect transistor structure having shielded source and method

A semiconductor device structure, comprising:

• a region of semiconductor material comprising:
• a substrate;
• and
• a semiconductor layer over the substrate, the semiconductor layer having a first conductivity type and having a first major surface;
• a first body region of a second conductivity type opposite to the first conductivity type in the semiconductor layer, wherein the first body region comprises:
• a first body region first segment adjacent to the first major surface;
• and
• a first body region second segment laterally adjacent to the first body region first segment in a top plan view;
• a first source region of the first conductivity type in the first body region first segment but not in at least part of the first body region second segment;
• an insulated gate electrode proximate to the first major surface and adjoining the first body region first segment, the first body region second segment, and the first source region;
• a first conductive structure connected to the first body region first segment and the first source region;
• and
• a ballast resistor in the first body region second segment and connected to the first source region.

A semiconductor device structure, comprising:

• a region of semiconductor material having at least a portion comprising a first conductivity type and having a first major surface;
• a body region comprising:
• a second conductivity type opposite to the first conductivity type;
• a first stripe region extending inward from the first major surface comprising:
• a first stripe region first segment having a first peak dopant concentration;
• a first stripe region second segment laterally adjoining the first stripe region first segment at the first major surface in a top plan view and having a second peak dopant concentration less than the first peak dopant concentration;
• a second stripe region extending inward from the first major surface and laterally spaced apart from the first stripe region, the second stripe region comprising:
• a second stripe region first segment having the first peak dopant concentration;
• a second stripe region second segment laterally adjoining the second stripe region first segment at the first major surface in the top plan view having the second peak dopant concentration;
• a first source region of the first conductivity type in the first stripe region first segment but not disposed in at least a portion of the first stripe region second segment;
• a second source region of the first conductivity type in the second stripe region second segment but not disposed in at least a portion of the second stripe region second segment;
• an insulated gate electrode structure associated with the first stripe region first segment, the first source region, the first stripe region second segment, the second stripe region first segment, the second source region, and the second stripe region second segment;
• and
• a conductive structure coupled to the body region, the first source region and the second source region.