Semiconductor structure and method of manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• patterning an insulator stripe over a semiconductor substrate, comprising forming an insulator layer over the semiconductor substrate and at a bottom of the insulator stripe;
• depositing a semiconductor capping layer continuously over the insulator stripe, wherein the semiconductor capping layer comprises crystalline materials;
• cutting off the semiconductor capping layer between the insulator stripes;
• and
• patterning a gate stripe over the insulator stripe and the semiconductor capping layer after cutting off the semiconductor capping layer, wherein the gate stripe is in direct contact with the semiconductor capping layer, a first portion of the semiconductor capping layer covered by the gate is configured as a channel structure, wherein at least a portion of the insulator layer is free from being under a coverage of the semiconductor capping layer, and the semiconductor capping layer is free from being in direct contact with the semiconductor substrate.

A method for manufacturing a semiconductor structure, comprising:

• forming a dielectric layer over a semiconductor substrate;
• patterning an insulator stripe over the semiconductor substrate, comprising forming an insulator layer over the semiconductor substrate and at a bottom of the insulator stripe;
• depositing a semiconductor capping layer continuously over the insulator stripe, wherein the semiconductor capping layer comprises crystalline materials, wherein the semiconductor capping layer is free from being in direct contact with the semiconductor substrate;
• cutting off the semiconductor capping layer between the insulator stripes;
• forming a gate, wherein the gate is in direct contact with the semiconductor capping layer, a first portion of the semiconductor capping layer covered by the gate is configured as a channel structure;
• and
• forming a source region laterally abutting the gate.