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US 11,637,190 B2Granted
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae Lee
Life of this patent
Estimating the term…
Abstract
The present technology provides a semiconductor device. The semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.
Claims18
A semiconductor device comprising:
- a stack including insulating patterns and conductive patterns stacked alternately with each other;
- a channel layer including a first channel portion protruding out of the stack from inside an upper portion of the stack and a second channel portion extending in the stack;
- and
- a conductive line covering the stack and surrounding a portion of the first channel portion,
- wherein the first channel portion includes metal silicide.
2 more elements
A semiconductor device comprising:
- a stack including insulating patterns and conductive patterns stacked alternately with each other;
- a channel layer including a first channel portion protruding out of the stack from inside an upper portion of the stack and a second channel portion extending in the stack;
- and
- a conductive line including a barrier layer and a conductive layer and surrounding the first channel portion,
- wherein the first channel portion, the second channel portion, and the conductive line include different materials, and
- wherein the conductive layer of the conductive line is spaced apart from the stack.
3 more elements
Dependencies are inferred from the claim text.