Lateral bipolar transistors with polysilicon terminals
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor Jain, Alvin J. Joseph, Alexander Derrickson, Judson R. Holt, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to lateral bipolar transistors and methods of manufacture. The structure includes: an extrinsic base comprising semiconductor material; an intrinsic base comprising semiconductor material which is located below the extrinsic base; a polysilicon emitter on a first side of the extrinsic base; a raised collector on a second side of the extrinsic base; and sidewall spacers on the extrinsic base which separate the extrinsic base from the polysilicon emitter and the raised collector.
Claims20
A structure comprising:
- an extrinsic base comprising semiconductor material;
- an intrinsic base comprising semiconductor material which is located below the extrinsic base;
- a polysilicon emitter on a first side of the extrinsic base and touching the intrinsic base;
- a raised collector on a second side of the extrinsic base;
- and
- sidewall spacers on the extrinsic base which separate the extrinsic base from the polysilicon emitter and the raised collector.
A structure comprising:
- an emitter comprising polysilicon over a semiconductor on insulator substrate;
- an extrinsic base laterally adjacent to the emitter and over the semiconductor on insulator substrate;
- a raised collector laterally adjacent to the extrinsic base and comprising single crystalline semiconductor material over the semiconductor on insulator substrate;
- and
- sidewall spacers comprising dielectric material separating the extrinsic base from the emitter and the raised collector,
- wherein the single crystalline semiconductor material is partially within the semiconductor on insulator substrate.
A method comprising:
- forming an extrinsic base comprising semiconductor material;
- forming an intrinsic base comprising semiconductor material which is located below the extrinsic base;
- forming a polysilicon emitter on a first side of the extrinsic base;
- forming a raised collector on a second side of the extrinsic base;
- and
- forming sidewall spacers on the extrinsic base which separate the extrinsic base from the polysilicon emitter and the raised collector.
Dependencies are inferred from the claim text.