III-nitride semiconductor device with non-active regions to shape 2DEG layer

A semiconductor device, comprising:

• a first III-nitride layer;
• a second III-nitride layer in direct contact with the first III-nitride layer;
• a 2DEG region formed adjacent to an interface between the first III-nitride layer and the second III-nitride layer;
• a first contact layer and a second contact layer disposed over the second III-nitride layer;
• a plurality of one or more structures between the first contact layer and the second contact layer from a top view perspective, wherein a material of the structures is different from a material of the first III-nitride layer or a material of the second III-nitride layer;
• and
• a gate layer disposed between the first contact layer and the second contact layer
• wherein the one or more structures is positioned in contact with the 2DEG region between the gate layer and the first contact layer, shaping the 2DEG region such that a width of the 2DEG region between the first contact layer and the gate layer gradually increases from the gate layer towards a point between the gate layer and the first contact layer forming the drain in a first portion and then gradually decreases in a second portion towards the first contact forming the drain.

A semiconductor device, comprising:

• a first III-nitride layer;
• a second III-nitride layer in direct contact with the first III-nitride layer;
• a 2DEG region formed adjacent to an interface between the first III-nitride layer and the second III-nitride layer;
• a first contact layer forming a drain and a second contact layer forming a source disposed over the second III-nitride layer;
• a structure adjacent to an interface of the first III-nitride layer and the second III-nitride layer, wherein a material of the structure is different from a material of the first III-nitride layer or a material of the second III-nitride layer such that a non-active region is formed by the structure;
• a gate layer disposed between the first contact layer and the second contact layer;
• wherein the structure is positioned adjacent to the 2DEG region between the gate layer and the first contact layer and shapes the 2DEG region such that a width of the 2DEG region between the first contact layer and the gate layer gradually increases from the gate layer to the first contact layer forming the drain;
• and
• wherein the structure extends from the gate layer to the second contact layer such that a width of the 2DEG region gradually decreases from the second contact layer to the gate layer.

A semiconductor device, comprising:

• a first III-nitride layer;
• a second III-nitride layer in direct contact with the first III-nitride layer;
• a 2DEG region formed adjacent to an interface between the first III-nitride layer and the second III-nitride layer;
• a first contact layer forming a drain and a second contact layer forming a source disposed over the second III-nitride layer;
• a structure adjacent to an interface of the first III-nitride layer and the second III-nitride layer, wherein a material of the structure is different from a material of the first III-nitride layer or a material of the second III-nitride layer such that a non-active region is formed by the structure;
• a gate layer disposed between the first contact layer and the second contact layer;
• wherein the structure is positioned adjacent to the 2DEG region between the gate layer and the first contact layer and shapes the 2DEG region such that a width of the 2DEG region between the first contact layer and the gate layer gradually increases from the gate layer to the first contact layer forming the drain;
• and
• wherein the width of the 2DEG region gradually increases from the first contact layer to the gate layer.