Back to results
US 11,637,173 B2Granted
Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder
AssigneeGlobalFoundries U.S. Inc.
InventorsYves T. Ngu, Siva P. Adusumilli, Steven M. Shank, Michael J. Zierak, Mickey H. Yu
Life of this patent
Estimating the term…
Abstract
A structure includes a semiconductor substrate, and a polycrystalline resistor region over the semiconductor substrate. The polycrystalline resistor region includes a semiconductor material in a polycrystalline morphology. A dopant-including polycrystalline region is between the polycrystalline resistor region and the semiconductor substrate.
Claims18
A structure comprising:
- a semiconductor substrate;
- a polycrystalline resistor region over the semiconductor substrate, the polycrystalline resistor region including a semiconductor material in a polycrystalline morphology;
- a silicide layer on the polycrystalline resistor region, and including a first portion coupled to a first contact thereon and a second portion coupled to a second contact thereon;
- and
- a dopant-including polycrystalline region between the polycrystalline resistor region and the semiconductor substrate,
- wherein a dopant of the dopant-including polycrystalline region includes a noble gas element.
3 more elements
A structure, comprising:
- a semiconductor substrate;
- a polycrystalline resistor region over a semiconductor substrate, the polycrystalline resistor region including a semiconductor material in a polycrystalline morphology;
- a silicide layer on the polycrystalline resistor region, and including a first portion coupled to a first contact thereon and a second portion coupled to a second contact thereon;
- an argon-including polycrystalline region between the polycrystalline resistor region and the semiconductor substrate;
- and
- an active device over the semiconductor substrate, wherein the active device includes a monocrystalline body and the argon-including polycrystalline region extends under the active device.
3 more elements
A method comprising:
- forming a first dopant including polycrystalline region by forming a first monocrystalline region in a semiconductor substrate and including a noble gas element therein;
- forming an oxide layer in the semiconductor substrate to create a dopant-including polycrystalline region under the oxide layer;
- forming a second monocrystalline region in the semiconductor substrate to create a second dopant-including polycrystalline region,
- wherein one of the oxide layer and second monocrystalline region include the noble gas element;
- forming a reformed monocrystalline active region from an upper portion of the first dopant-including polycrystalline region, leaving a portion of the first dopant-including polycrystalline region as an isolation layer under the reformed monocrystalline active region;
- forming an active device over the reformed monocrystalline active region and a polycrystalline resistor over one of the oxide layer and the second dopant-including polycrystalline region, wherein the oxide layer is part of one of a trench isolation arrangement and a gate dielectric layer;
- forming a silicide layer on the polycrystalline resistor, the silicide layer including a first portion and a second portion;
- and
- forming a first contact on the first portion of the silicide layer and a second contact on the second portion of the silicide layer.
6 more elements
Dependencies are inferred from the claim text.