Array substrate and manufacturing method thereof including via hole to facilitate dehydrogenation, display panel, and display device

A display panel, comprising:

• an array substrate, wherein the array substrate comprises:
• a base substrate;
• a pixel circuit, which is disposed on one side of the base substrate, wherein the pixel circuit comprises a first transistor and a second transistor, the first transistor comprises a first active layer, the second transistor comprises a second active layer, and the first active layer and the second active layer both comprise silicon;
• a first type inorganic layer and a second type inorganic layer, which are disposed on one side of the first active layer facing away from the base substrate, wherein the first type inorganic layer is disposed closer to the first active layer than the second type inorganic layer;
• and
• a first via hole, wherein the first via hole at least penetrates through the second type inorganic layer, and a vertical projection of the first active layer on a plane where the base substrate is located overlaps with a vertical projection of an end of the first via hole closest to the first active layer on the plane where the base substrate is located;
• wherein
• concentration of hydrogen ions in the first active layer is less than concentration of hydrogen ions in the second active layer;
• the first transistor further comprises a first source electrode and a first drain electrode, and the first source electrode and the first drain electrode are respectively electrically connected to the first active layer through a second via hole;
• and
• along a direction perpendicular to the base substrate, an end of the first via hole facing away from the base substrate is closer to the base substrate than an end of the second via hole facing away from the base substrate.

A display device, comprising:

• a display panel, wherein the display panel comprises an array substrate, and the array substrate comprises:
• a base substrate;
• a pixel circuit, which is disposed on one side of the base substrate, wherein the pixel circuit comprises a first transistor and a second transistor, the first transistor comprises a first active layer, the second transistor comprises a second active layer, and the first active layer and the second active layer both comprise silicon;
• a first type inorganic layer and a second type inorganic layer, which are disposed on one side of the first active layer facing away from the base substrate, wherein the first type inorganic layer is disposed closer to the first active layer than the second type inorganic layer;
• and
• a first via hole, wherein the first via hole at least penetrates through the second type inorganic layer, and a vertical projection of the first active layer on a plane where the base substrate is located overlaps with a vertical projection of an end of the first via hole closest to the first active layer on the plane where the base substrate is located;
• wherein
• concentration of hydrogen ions in the first active layer is less than concentration of hydrogen ions in the second active layer;
• the first transistor further comprises a first source electrode and a first drain electrode, and the first source electrode and the first drain electrode are respectively electrically connected to the first active layer through a second via hole;
• and
• along a direction perpendicular to the base substrate, an end of the first via hole facing away from the base substrate is closer to the base substrate than an end of the second via hole facing away from the base substrate.