Imaging device

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• first electrodes located on the insulating layer above the pixel region and arranged two-dimensionally in a column direction and a row direction;
• a photoelectric conversion layer that covers the first electrodes;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and configured to be electrically connected to the first electrodes;
• peripheral circuitry located in the peripheral region, configured to be electrically connected to the detection circuitry, and including analog circuitry and digital circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, the third electrode being electrically connected to the second electrode, wherein
• the third electrode overlaps the digital circuitry in a plan view, and
• in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the analog circuitry is located directly below the third electrode.

An imaging device comprising:

• a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region;
• an insulating layer that covers the pixel region and the peripheral region;
• a first electrode located on the insulating layer above the pixel region;
• a photoelectric conversion layer that covers the first electrode;
• a second electrode that covers the photoelectric conversion layer;
• detection circuitry located in the pixel region and connected to the first electrode;
• peripheral circuitry located in the peripheral region and connected to the detection circuitry;
• and
• a third electrode located on the insulating layer above the peripheral region, the third electrode being electrically connected to the second electrode, wherein
• the third electrode overlaps the peripheral circuitry in a plan view,
• the photoelectric conversion layer extends above the peripheral region, and
• the photoelectric conversion layer overlaps the peripheral circuitry in the plan view.