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US 11,637,144 B2Granted
Method of forming resistive memory cell having an ovonic threshold switch
OwnerPhilippe Boivininventor
Life of this patent
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Abstract
The disclosure concerns a resistive memory cell, including a stack of a selector, of a resistive element, and of a layer of phase-change material, the selector having no physical contact with the phase-change material. In one embodiment, the selector is an ovonic threshold switch formed on a conductive track of a metallization level.
Claims20
A method, comprising:
- forming an ovonic threshold switch;
- forming a resistive element on the ovonic threshold switch;
- and
- forming a phase change layer of phase-change material in contact with the resistive element, the ovonic threshold switch having no mechanical contact with the phase-change material and the resistive element being positioned between the ovonic threshold switch and the phase change layer.
1 more element
A method of forming a resistive memory cell, comprising:
- depositing a phase change layer of phase change material;
- depositing a resistive element in contact with the phase change material;
- and
- forming an ovonic threshold switch having completely physically separated from the phase change material, the resistive element being positioned between the ovonic threshold switch and the phase change layer.
1 more element
A method, comprising:
- forming an interconnection network that includes a first level and a second level;
- and
- forming a memory cell located between the first level of the interconnection network and the second level of the interconnection network, forming the memory cell including:
- depositing a phase change material;
- forming a resistive element in contact with the phase change material;
- and
- forming an ovonic threshold switch physically separated from the phase change material, the resistive element being positioned between the ovonic threshold switch of the memory cell and the phase change material.
4 more elements
Dependencies are inferred from the claim text.