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US 11,637,141 B2Granted
Solid-state image pickup apparatus and image pickup system
AssigneeCanon Kabushiki Kaisha
InventorsNobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Takeshi Ichikawa
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Abstract
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
Claims67
A photoelectric conversion apparatus comprising:
- a first semiconductor layer including a photoelectric conversion element;
- a second semiconductor layer including a source region and a drain region of a transistor, the transistor having a gate electrode disposed between the first semiconductor layer and the second semiconductor layer;
- an insulating layer disposed between the first semiconductor layer and the second semiconductor layer;
- a silicide which is provided on at least one of the gate electrode, the drain region and the source region of the transistor, and
- a diffusion prevention film configured to prevent and/or suppress diffusion of a metal included in the silicide and disposed between the first semiconductor layer and the second semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.