Array substrate and method of manufacturing same

An array substrate, comprising:

• a base substrate;
• an active island disposed on the base substrate;
• a gate insulating layer disposed on the active island;
• a gate disposed on the gate insulating layer;
• an interlayer dielectric layer covering the active island, the gate insulating layer, and the gate;
• a source/drain disposed on the interlayer dielectric layer;
• a passivation layer covering the source/drain;
• a color resist layer disposed on the passivation layer;
• a planarization layer disposed on the passivation layer;
• and
• a metal anode disposed on the planarization layer and electrically connected to the source/drain, wherein the active island comprises a channel region corresponding to the gate, and an orthographic projection of the color resist layer on the base substrate covers an orthographic projection of the channel region of the active island on the base substrate;
• wherein the array substrate further provides with a display area, the color resist layer comprises a color resist block located in the display area and a light blocking layer located above the active island, and an orthographic projection of the light blocking layer on the base substrate covers the orthographic projection of the channel region on the base substrate;
• and
• wherein the light blocking layer comprises a first color resist material layer and a second color resist material layer arranged in a stack, a color corresponding to the first color resist material layer is one selected from red, green, and blue, and a color corresponding to the second color resist material layer is another one in red, green, and blue.

A method of manufacturing an array substrate, comprising following steps:

• S10, forming an active island on a base substrate;
• S20, forming a gate insulating layer on the active island;
• S30, forming a gate on the gate insulating layer;
• S40, forming an interlayer dielectric layer covering the active island, the gate insulating layer, and the gate on the base substrate;
• S50, forming a source/drain on the interlayer dielectric layer;
• S60, forming a passivation layer covering the source/drain on the interlayer dielectric layer;
• S70, forming a color resist layer on the passivation layer and performing a patterning treatment on the color resist layer;
• S80, forming a planarization layer on the passivation layer;
• and
• S90, on the planarization layer, forming a metal anode electrically connected to the source/drain, wherein an orthographic projection of the color resist layer on the base substrate covers an orthographic projection of a channel region of the active island on the base substrate, wherein the step S80 further comprises:
• S81, forming a whole layer of the color resist layer on the passivation layer;
• S82, covering the color resist layer with a photomask and exposing the color resist layer;
• and
• S83, etching the color resist layer to form a color resist block located in a display area and a light blocking layer located above the active island, wherein an orthographic projection of the light blocking layer on the base substrate covers the orthographic projection of the channel region of the active island on the base substrate.