US 11,637,129 B2Granted

Semiconductor device, light-emitting device, and electronic device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorHiroyuki Miyake

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Abstract

An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

Claims6

Dependent claims

A light-emitting device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a capacitor, and a light-emitting element,
wherein the first transistor is configured to supply a current to the light-emitting element,
wherein the first transistor comprises a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region,
wherein the light-emitting element comprises a first electrode, a light-emitting layer over the first electrode, and a second electrode over the light-emitting layer,
wherein the first electrode of the light-emitting element comprises a region that overlaps with the first gate electrode and overlaps with the second gate electrode,
wherein the first gate electrode comprises a region that overlaps with the second gate electrode with the channel formation region therebetween,
wherein, in a channel length direction of the first transistor, a width of the second gate electrode is longer than a width of the first gate electrode,
wherein the first gate electrode is electrically connected to a first electrode of the capacitor,
wherein one of a source and a drain of the second transistor is electrically connected to a second electrode of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to a first wiring to which a data signal is supplied,
wherein one of a source and a drain of the third transistor is electrically connected to the second gate electrode,
wherein the other of the source and the drain of the third transistor is electrically connected to a second wiring to which a potential is supplied,
wherein one of a source and a drain of the first transistor is electrically connected to a third wiring through the fourth transistor, and
wherein the other of the source and the drain of the first transistor is electrically connected to the first wiring through the second transistor.

11 more elements

A light-emitting device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a capacitor, and a light-emitting element,
wherein the first transistor is configured to supply a current to the light-emitting element,
wherein the first transistor comprises a first gate electrode, a second gate electrode, and a semiconductor layer comprising a channel formation region,
wherein the light-emitting element comprises a first electrode, a light-emitting layer over the first electrode, and a second electrode over the light-emitting layer,
wherein the first electrode of the light-emitting element comprises a region that overlaps with the first gate electrode and overlaps with the second gate electrode,
wherein the first gate electrode comprises a region that overlaps with the second gate electrode with the channel formation region therebetween,
wherein the first gate electrode is electrically connected to a first electrode of the capacitor,
wherein one of a source and a drain of the second transistor is electrically connected to a second electrode of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to a first wiring to which a data signal is supplied,
wherein one of a source and a drain of the third transistor is electrically connected to the second gate electrode,
wherein the other of the source and the drain of the third transistor is electrically connected to a second wiring to which a potential is supplied,
wherein one of a source and a drain of the first transistor is electrically connected to a third wiring through the fourth transistor, and
wherein the other of the source and the drain of the first transistor is electrically connected to the first wiring through the second transistor.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/172,213Filed 10 Feb 2021 · continuation
Priority: JP 2011-20269016 Sep 2011
Published: US 2021/0167096 A13 Jun 2021
Granted: 25 Apr 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…
G09G 3/3233
Using an active matrix: with pixel circuitry controlling the current through the light-emitting element
G09G 3/3275
Organic, e.g. using organic light-emitting diodes [OLED]: details of drivers for data electrodes
H10D 84/00
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting

Family

Application13/612,073Parent of this continuation · filed 12 Sep 2012
Application14/640,235Parent of this continuation · filed 6 Mar 2015
US 8,975,709 B2Parent of this continuation · filed 10 Mar 2015
Application15/341,069Parent of this continuation · filed 2 Nov 2016
US 9,508,709 B2Parent of this continuation · filed 29 Nov 2016
Application16/026,115Parent of this continuation · filed 3 Jul 2018
US 10,032,798 B2Parent of this continuation · filed 24 Jul 2018
Application16/834,308Parent of this continuation · filed 30 Mar 2020
US 10,622,380 B2Parent of this continuation · filed 14 Apr 2020
US 2021/0167096 A1Pre-grant publication · published 3 Jun 2021
US 10,950,633 B2Parent of this continuation
US 2013/0069068 A1Published application
US 2015/0179635 A1Published application
US 2017/0053948 A1Published application
US 2018/0315780 A1Published application
US 2020/0227445 A1Published application
US 11,637,129 B2This patent

From the US filing history. Foreign family members aren’t listed.