Memory device

A memory device comprising:

• a substrate;
• a stack structure located on the substrate, wherein the stack structure comprises a plurality of conductive layers and a plurality of insulating layers stacked alternately on each other;
• a first contact connected to one of the plurality of conductive layers of the stack structure;
• and
• a first supporting pillar penetrating the stack structure and disposed adjacent to a first side and a second side of the first contact, the first supporting pillar comprising:
• a first body portion disposed adjacent to the first side of the first contact;
• and
• a plurality of first extension portions located on two sides of the first body portion, wherein a length of each of the first extension portions is greater than a width of the first contact, and a first portion of the plurality of first extension portions is disposed adjacent to the second side of the first contact,
• wherein the stack structure further comprises a plurality of sacrificial layers, the plurality of sacrificial layers and the plurality of insulating layers stacked alternately on each other, and the first supporting pillar is disposed to separate the plurality of sacrificial layers from the plurality of conductive layers.