Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsAtsushi Fukumoto, Keisuke Suda, Takayuki Ito
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Abstract
A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.
Claims6
A semiconductor device comprising:
- a substrate;
- a stacked body provided on the substrate;
- and
- a first pillar portion and a second pillar portion penetrating the stacked body, wherein
- the first pillar portion is a memory pillar,
- the second pillar portion comprises a first film including a first material and a second material, and a second film provided on an inner side of the first film,
- the second material is a material that increases an etching rate of the first material as a composition rate relative to the first material increases, and the composition rate decreases from an upper part to a lower part of the first film,
- the second pillar portion separates the stacked body into a plurality of blocks,
- the first film is formed in a structure having a V-shaped section of the second pillar portion, and
- the second pillar portion further comprises an insulation film provided on an outer side of the first film, and the insulation film is formed in a structure including a first part having the V-shaped section and a second part having a section that is angled towards a center of the second pillar.
Dependencies are inferred from the claim text.