Non-volatile memory device and method for manufacturing the same

#This Application claims priority of Taiwan Patent Application No. 109107213, filed on Mar. 5, 2020, the entirety of which is incorporated by reference herein.

#The present disclosure relates to a memory device, and in particular, it relates to a non-volatile memory device and a method for manufacturing the same.

#Manufacturing processes have evolved toward miniaturization. In existing flash memory, the contact structure between the gate structures usually has a high aspect ratio, which causes a problem of high contact resistance. In the worst case, such contact structure with high aspect ratio may not be electrically connected to the substrate, thereby causing the failure of the flash memory. As a result, the yield of the flash memory will be reduced. In addition, as the spacing between the gate structures becomes smaller, the uniformity of these contact structures becomes difficult to control, thereby resulting in a non-uniform erasing ability of the memory cells of the flash memory. In order to avoid the above-mentioned problems, the spacing between the gate structures is increased by reducing the width of each gate structure in the memory array. However, as the width of the gate structure is reduced, it will cause a problem of reduced data retention ability and longer operation time. Therefore, how to reduce the contact resistance of the contact structure and improve the uniformity of the contact structures without significantly affecting the data retention ability and the operation time is a subject that the industry in this field is eager to improve.

#The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:

#FIG. 1 is a top-view of a non-volatile memory device in accordance with some embodiments.

#FIG. 2 is a top-view of an array region in accordance with some embodiments.

#The present disclosure is best understood from the following detailed description when read with the accompanying figures. The present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

#In the disclosure, the term “about” or “approximately” means in a range of 20% of a given value or range, preferably 10%, and more preferably 5%. In the disclosure, if there is no specific explanation, a given value or range means an approximate value which may imply the meaning of “about” or “approximately”. In this specification, “X is equal to or similar to Y” means that the absolute value of the difference between the two is within 5.0% of the larger one.

#The embodiments of the present invention provides a non-volatile memory device and a method for manufacturing the same. FIG. 1 is a top-view of a non-volatile memory device 500 in accordance with some embodiments. FIG. 2 is a top-view of an array region 100 in accordance with some embodiments. In one embodiment, the non-volatile memory device is a NOR flash memory.