Capacitive element comprising a monolithic conductive region having one part covering a front surface of a substrate and at least one part extending into an active region perpendicularly to the front surface
AssigneeSTMicroelectronics (Rousset) SAS
InventorAbderrezak Marzaki
Life of this patent
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Abstract
A capacitive element is located in an active region of the substrate and on a front face of the substrate. The capacitive element includes a first electrode and a second electrode. The first electrode is formed by a first conductive region and the active region. The second electrode is formed by a second conductive region and a monolithic conductive region having one part covering a surface of said front face and at least one part extending into the active region perpendicularly to said front face. The first conductive region is located between and is insulated from the monolithic conductive region and a second conductive region.
Claims15
An integrated circuit, comprising:
- a semiconductor substrate having an active region and a front face;
- and
- a capacitive element located in the active region and on part of the front face, the capacitive element comprising:
- a first electrode;
- and
- a second electrode;
- wherein the first electrode comprises a first conductive region and the semiconductor substrate in said active region;
- wherein the second electrode comprises a second conductive region and a monolithic conductive region;
- wherein the monolithic conductive region comprises a first part covering a surface of said front face and at least one second part extending perpendicularly to said front face into the semiconductor substrate in said active region;
- and
- wherein the first conductive region is located between and insulated from both the monolithic conductive region and the second conductive region.
Dependencies are inferred from the claim text.