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US 11,637,100 B2Granted
Semiconductor device having capacitor and resistor and a method of forming the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsQiying Wong, Handoko Linewih, Yudi Setiawan, Chengang Feng, Siow Lee Chwa
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Abstract
The present disclosure generally relates to a semiconductor device having a capacitor and a resistor and a method of forming the same. More particularly, the present disclosure relates to a metal-insulator-metal (MIM) capacitor and a thin film resistor (TFR) formed in a back end of line portion of an integrated circuit (IC) chip.
Claims20
A semiconductor device comprising:
- a first inter-metal region above a substrate;
- a second inter-metal region above the first inter-metal region;
- a capacitor comprising:
- a metal layer in the first inter-metal region;
- a conductive layer in the second inter-metal region, the conductive layer is above the metal layer;
- a first dielectric layer between the metal layer and the conductive layer;
- a conductive film in the second inter-metal region, the conductive film has a first horizontal section above the conductive layer and a second horizontal section laterally adjacent to the conductive layer;
- a second dielectric layer between the conductive layer and the conductive film;
- a first interconnect via disposed upon the metal layer;
- and
- a second interconnect via disposed upon the conductive layer.
8 more elements
A semiconductor device comprising:
- a first inter-metal region above a substrate;
- a second inter-metal region above the first inter-metal region;
- a capacitor comprising:
- a metal layer in the first inter-metal region;
- a conductive layer in the second inter-metal region, the conductive layer is above the metal layer;
- a first dielectric layer between the metal layer and the conductive layer;
- a conductive film in the second inter-metal region, the conductive film has a first horizontal section above the conductive layer and a second horizontal section laterally adjacent to the conductive layer;
- a second dielectric layer between the conductive layer and the conductive film;
- and
- a resistor comprising:
- a resistive metallic film in the second inter-metal region, wherein the resistive metallic film of the resistor and the conductive film of the capacitor are a same material.
8 more elements
A method of forming a resistor and a capacitor in a semiconductor device, the method comprising:
- providing a first inter-metal region above a substrate, the first inter-metal region having a dielectric material;
- forming a metal layer in the first inter-metal region;
- forming a first dielectric layer on the metal layer;
- forming a conductive layer on the first dielectric layer;
- forming a second dielectric layer on the conductive layer;
- forming a conductive film on the second dielectric layer, the conductive film has a first horizontal section above the conductive layer and a second horizontal section laterally adjacent to the conductive layer;
- forming a resistive metallic film above the dielectric material in the first inter-metal region, wherein the resistive metallic film and the conductive film are made of a same material;
- and
- forming a second inter-metal region above the first inter-metal region, wherein the conductive layer, the conductive film, and the resistive metallic film are in the second inter-metal region.
6 more elements
Dependencies are inferred from the claim text.