Forming ESD devices using multi-gate compatible processes

A method of manufacturing a semiconductor device, comprising:

• forming a fin extruding from a semiconductor substrate, wherein the fin includes a first type and a second type epitaxial layers on the semiconductor substrate, the first type and the second type epitaxial layers having different material compositions and alternatingly disposed in a vertical direction;
• forming first and second gate structures above the fin;
• doping a first region of the fin with a first dopant of a first conductivity type;
• doping a second region of the fin with a second dopant of a second conductivity type opposite the first conductivity type, wherein the first and second regions are between the first and second gate structures;
• forming a dielectric layer on sidewalls of the first and second gate structures;
• forming contact holes in the dielectric layer exposing the first and second regions;
• and
• forming conductive contacts in the contact holes.

An electrostatic discharging (ESD) device, comprising:

• a semiconductor substrate;
• a stack of a first type and a second type epitaxial layers on the semiconductor substrate, the first type and the second type epitaxial layers having different material compositions and the first type and the second type epitaxial layers being alternatingly disposed in a vertical direction;
• a first implant region in the stack, wherein the first implant region has a first conductivity type;
• and
• a second implant region in the stack, wherein the second implant region has a second conductivity type opposite the first conductivity type, and wherein the second implant region is laterally distant from the first implant region.