Gallium nitride and silicon carbide hybrid power device

A method of fabricating a hybrid silicon carbide switching device, the method comprising:

• obtaining a first device structure, the first device structure comprising:
• a first substrate layer;
• a first transistor formed on a front side of the first substrate layer, the first transistor comprising a source region, a gate region, and a drain region;
• obtaining a second device structure, the second device structure comprising:
• a second substrate layer comprising silicon carbide of a first conductivity type;
• a first silicon carbide layer of the first conductivity type;
• a second silicon carbide layer of a second conductivity type;
• and
• a first contact region of the first conductivity type, the first contact region traversing the second silicon carbide layer and contacting the first silicon carbide layer;
• bonding the first device structure to the second device structure at a dielectric layer;
• and
• forming a first contact to couple the drain region to the first contact region though a back-side of the first substrate layer.