Semiconductor package having a through intervia through the molding compound and fan-out redistribution layers disposed over the respective die of the stacked fan-out system-in-package

A package comprising:

• a first device die;
• a first fan-out tier bonded to the first device die, the first fan-out tier comprising:
• a second device die, wherein the second device die comprises a through-silicon via (TSV), and wherein the TSV electrically connects the first device die and the second device die;
• a first molding compound extending along sidewalls of the second device die;
• and
• a first through intervia (TIV) extending through the first molding compound;
• a first fan-out redistribution layer (RDL) bonded to the first fan-out tier;
• and
• a heat dissipation lid attached to a backside of the first device die using an adhesive, the heat dissipation lid being made of a metal layer or a metal alloy layer, the adhesive and the first molding compound having a same width, an entirety of the adhesive being a planar layer, the backside of the first device die facing away from the second device die.

A package comprising:

• a first redistribution structure;
• a first device die over the first redistribution structure, wherein the first device die comprises a first through-silicon via (TSV);
• a second redistribution structure over the first device die;
• a first molding compound between the first redistribution structure and the second redistribution structure, the first molding compound surrounding the first device die;
• a second device die over the second redistribution structure, wherein the second device die comprises a second TSV;
• a third redistribution structure over the second device die;
• a second molding compound between the second redistribution structure and the third redistribution structure, the second molding compound surrounding the second device die;
• a third device die bonded to the first redistribution structure, the first redistribution structure being interposed between the first device die and the third device die;
• a first conductive pillar extending through the first molding compound, a first end of the first conductive pillar being level with a first surface of the first molding compound, a second end of the first conductive pillar being level with a second surface of the first molding compound;
• and
• a second conductive pillar extending through the second molding compound, a first end of the second conductive pillar being level with a first surface of the second molding compound, a second end of the second conductive pillar being level with a second surface of the second molding compound.