Method for fabricating an integrated circuit device

A method for fabricating an integrated circuit device, comprising:

• providing a substrate;
• forming an integrated circuit area on the substrate, said integrated circuit area comprising a dielectric stack;
• forming a seal ring in said dielectric stack and around a periphery of said integrated circuit area;
• forming a cap layer on the dielectric stack;
• forming a trench around the seal ring and exposing a sidewall of said dielectric stack;
• forming a metal-insulator-metal (MIM) capacitor comprising a capacitor top metal (CTM) layer and a capacitor bottom metal (CBM) layer on said dielectric stack;
• forming a moisture blocking layer continuously covering said integrated circuit area and said MIM capacitor, wherein said cap layer is interposed between said CTM layer and said CBM layer of said MIM capacitor and functions as a capacitor dielectric layer of said MIM capacitor, and wherein said moisture blocking layer extends to said sidewall of said dielectric stack, thereby sealing a boundary between two adjacent dielectric films in said dielectric stack;
• and
• forming a passivation layer over said moisture blocking layer.