Coaxial through via with novel high isolation cross coupling method for 3D integrated circuits

A semiconductor package, comprising:

• a first semiconductor device;
• a second semiconductor device positioned below the first semiconductor device;
• an inter fan-out layer disposed between the first semiconductor device and the second semiconductor device, wherein the inter fan-out layer comprises a semiconductor die containing an active device therein, a first insulation layer disposed under the semiconductor die, and a first ground shielding structure within the semiconductor die and disposed about the active device so as to isolate the active device from radiation signals, wherein the first ground shielding structure extends from a top surface of the semiconductor die to a bottom surface of the semiconductor die to contact a top surface of the first insulation layer;
• a ground shielded transmission path coupling the first semiconductor device to the second semiconductor device, wherein the ground shielded transmission path extends through the inter fan-out layer;
• and
• a first continuous ground shielding layer formed in the first semiconductor device so as to extend laterally over the active device and isolate a first metal layer from a second metal layer contained in the first semiconductor device, except where one or more conductive via structures couple the first and second metal layers.

A semiconductor package, comprising:

• a first semiconductor device comprising a first via layer, a first metal layer formed over the first via layer, a second via layer formed over the first metal layer, and a second metal layer formed over the second via layer;
• a second semiconductor device positioned below the first semiconductor device;
• an inter fan-out layer disposed between the first semiconductor device and the second semiconductor device and below the first via layer, wherein the inter fan-out layer comprises a semiconductor die containing an active device therein, a first insulation layer disposed under the semiconductor die, and a first ground shielding structure within the semiconductor die and disposed about the active device so as to isolate the active device from radiation signals;
• a ground shielded transmission path coupling the first semiconductor device to the second semiconductor device, wherein the ground shielded transmission path extends through the inter fan-out layer;
• and
• a first continuous ground shielding layer extending laterally through the second via layer over the active device so as to isolate the first and second metal layers from each other except where one or more first conductive via structures couple the first and second metal layers, wherein the continuous ground shielding layer is conductively coupled to the first ground shielding structure and ground.