Semiconductor device having three-dimensional structure
AssigneeSK hynix Inc.
InventorsSung Lae Oh, Sang Woo Park
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a three-dimensional structure includes a first wafer including a first bonding pad on one surface thereof; a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer; a plurality of anti-warpage grooves on the one surface of the first wafer, and laid out in a stripe shape; and a plurality of anti-warpage ribs on the one surface of the second wafer and coupled respectively to the plurality of anti-warpage grooves, and laid out in a stripe shape.
Claims20
A semiconductor device having a three-dimensional structure, comprising:
- a first wafer including a first bonding pad on one surface thereof;
- a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer;
- a plurality of anti-warpage grooves on the one surface of the first wafer, and laid out in a stripe shape;
- and
- a plurality of anti-warpage ribs on the one surface of the second wafer and coupled respectively to the plurality of anti-warpage grooves, and laid out in a stripe shape.
A semiconductor device having a three-dimensional structure, comprising:
- a first wafer including a first bonding pad on one surface thereof;
- a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer;
- a plurality of first anti-warpage pads on the one surface of the first wafer, and laid out in a stripe shape;
- and
- a plurality of second anti-warpage pads on the one surface of the second wafer and bonded respectively to the plurality of first anti-warpage pads, and laid out in a stripe shape,
- wherein at least one of the plurality of first anti-warpage pads has a thickness greater than that of the first bonding pad.
A semiconductor device having a three-dimensional structure, comprising:
- a first wafer including a first bonding pad on one surface thereof;
- a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer;
- and
- a plurality of anti-warpage metal ribs defined in the first wafer, and laid out in a stripe shape.
A semiconductor device having a three-dimensional structure, comprising:
- a first wafer including a first bonding pad on one surface thereof;
- a second wafer including a second bonding pad, which is bonded to the first bonding pad, on one surface thereof bonded to the one surface of the first wafer;
- a plurality of first anti-warpage pads on the one surface of the first wafer, and laid out in a stripe shape;
- and
- a plurality of second anti-warpage pads on the one surface of the second wafer and bonded respectively to the plurality of first anti-warpage pads, and laid out in a stripe shape,
- wherein the plurality of first anti-warpage pads comprise a material with a hardness greater than that of the first bonding pad.
Dependencies are inferred from the claim text.