Semiconductor device with V2V rail and methods of making same

A semiconductor device comprising:

• first and second active regions extending in a first direction;
• first and second metal-to-drain/source (MD) contact structures which extend in a second direction perpendicular to the first direction, and correspondingly overlap the first and second active regions;
• a via-to-via (V2V) rail which extends in the first direction, the V2V rail overlapping the first and second MD contact structures;
• a first conductive segment which is in a first metallization layer and overlaps the V2V rail;
• and
• a first via-to-MD (VD) structure between the first MD contact structure and the first conductive segment, the first VD structure electrically coupling the first conductive segment, the V2V rail and the first MD contact structure;
• and
• wherein the second MD contact structure is electrically decoupled from the V2V rail.

A semiconductor device comprising:

• an active region;
• first, second and third metal-to-drain/source (MD) contact structures which extend in a first direction and correspondingly overlap the active region;
• a via-to-via (V2V) rail which extends in a second direction substantially perpendicular to the first direction, and overlaps the first, second and third MD contact structures;
• a first conductive segment which overlaps the V2V rail, is in a first metallization layer, and, relative to the second direction, substantially overlaps each of the first, second and third MD contact structures;
• a first via-to-MD (VD) structure between the first MD contact structure and the first conductive segment, the first VD structure electrically coupling the first conductive segment, the V2V rail and the first MD contact structure;
• and
• first and second gate structures which extend in the first direction and correspondingly overlap the active region;
• and
• wherein:
• at least one of the second or third MD contact structures is electrically decoupled from the V2V rail;
• the first gate structure is interposed between the first and second MD contact structures;
• and
• the second gate structure is interposed between the second and third MD contact structures.