Semiconductor device including back side power supply circuit

A semiconductor device, the semiconductor device comprising:

• a substrate;
• and
• a front side circuit disposed over a front surface of the substrate, a front side insulating layer being disposed over the front surface, wherein:
• the front side circuit includes:
• a plurality of buried power supply wirings embedded in the first front side insulating layer and extending in a first direction, the plurality of buried power supply wirings including a first buried power supply wiring, a pair of second buried power supply wirings sandwiching the first buried power supply wiring, a third buried power supply wiring, and a pair of fourth buried power supply wirings sandwiching the third buried power supply wiring;
• and
• a power switch configured to electrically connect and disconnect the first buried power supply wiring and the pair of second buried power supply wirings,
• the pair of second buried power supply wirings are separated from the pair of fourth buried power supply wirings, respectively, and
• the first buried power supply wiring and the third buried power supply wirings form one continuously extending wiring.

A semiconductor device including comprising:

• a substrate;
• a front side circuit disposed over a front surface of the substrate;
• and
• a backside power delivery circuit disposed over a back surface of the substrate and including a back side power supply wiring, wherein:
• the front side circuit includes:
• a first fin structure comprising a source region and a drain region;
• a gate structure disposed over the first fin structure;
• a buried power supply wiring;
• and
• a conductive connection pattern connecting one of the source region or the drain region to the buried power supply line, and
• the buried power supply wiring is connected to the back side power supply wiring by a through-silicon via (TSV) passing through the substrate.