Etching method and plasma etching apparatus
AssigneeTokyo Electron Limited
InventorKoki Tanaka
Life of this patent
Estimating the term…
Abstract
An etching method includes: (a) providing a substrate that contains silicon, on a support; (b) etching the substrate with plasma generated from a first gas that includes a fluorine-containing gas, to form an etching shape having a bottom; (c) generating plasma from a second gas that includes a hydrogen fluoride (HF) gas, to selectively form a condensed or solidified layer of HF at the bottom of the etching shape; and (d) etching the bottom with the plasma generated from the second gas, by supplying a bias power to the support. During (c) and (d), a temperature of the substrate is maintained to be 0° C. or lower.
Claims14
An etching method comprising:
- (a) providing a substrate that contains silicon, on a support;
- (b) etching the substrate with plasma generated from a first gas that includes a fluorine-containing gas, to form an etching shape having a bottom;
- (c) generating plasma from a second gas that includes a hydrogen fluoride (HF) gas, to selectively form a condensed or solidified layer of HF at the bottom of the etching shape;
- and
- (d) etching the bottom with the plasma generated from the second gas, by supplying a bias power to the support,
- wherein during (c) and (d), a temperature of the substrate is maintained to be 0° C. or lower.
An etching method comprising:
- providing a substrate that contains silicon, on a support inside a chamber;
- setting a temperature of the substrate to 0° C. or lower;
- supplying an HF gas with a volume flow ratio of 30% or more with respect to a total flow rate of a processing gas, into the chamber;
- and
- etching the substrate with plasma generated from the processing gas, by supplying a radio-frequency power,
- wherein during the supplying and the etching, the temperature of the substrate is maintained to be 0° C. or lower.
Dependencies are inferred from the claim text.