Method for forming a semiconductor device having protrusion structures on a substrate and a planarized capping insulating layer on the protrusion structures

A method for forming a semiconductor device comprising:

• forming protrusion structures on a substrate, wherein each of the protrusion structures comprises a molded structure comprising a central region and a stepped region surrounding the central region, an upper insulation layer on the central region of the molded structure, and a planarization stop layer on the upper insulation layer;
• forming a capping insulation layer on the substrate having the protrusion structures;
• forming a mask pattern having openings on the capping insulation layer, wherein the openings overlap the central regions of the protrusion structures;
• etching the capping insulation layer exposed by the openings;
• removing the mask pattern after etching the capping insulation layer;
• performing a first planarization process for first planarizing the capping insulation layer, after the mask pattern is removed;
• performing a second planarization process for second planarizing the capping insulation layer to form a planarized capping insulation layer, after the first planarization process;
• and
• removing the planarization stop layers of the protrusion structures to expose the upper insulation layers, wherein the openings have a smaller size than the planarization stop layers of the protrusion structures, and
• wherein the openings comprise openings having different widths or sizes from each other.

A method for forming a semiconductor device comprising:

• forming first and second protrusion structures on a substrate, wherein the first protrusion structure comprises a first molded structure comprising a first central region and a first stepped region adjacent to the first central region, a first upper insulation layer on the first central region, and a first planarization stop layer on the first upper insulation layer, and wherein the second protrusion structure comprises a second molded structure comprising a second central region and a second stepped region adjacent to the second central region, a second upper insulation layer on the second central region, and a second planarization stop layer on the second upper insulation layer;
• forming a capping insulation layer on the substrate having the first and second protrusion structures, wherein the capping insulation layer overlaps the first and second planarization stop layers;
• forming a mask pattern having first and second openings on the capping insulation layer, wherein the first opening overlap the first central region of the first protrusion structure, and wherein the second opening overlap the second central region of the second protrusion structure;
• etching the capping insulation layer exposed by the first and second openings of the mask pattern;
• removing the mask pattern after etching the capping insulation layer;
• and
• performing a planarization process for planarizing the capping insulation layer after the mask pattern is removed,
• wherein a width of the first opening is different from a width of the second opening.