Barrier layer for contact structures of semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsinhsiang Tseng, Chi-Ruei Yeh, Tsung-Yu Chiang
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Abstract
The present disclosure describes a semiconductor device with a diffusion barrier layer on source/drain (S/D) contact structures and a method of fabricating the semiconductor device. The method of fabricating the semiconductor device includes forming a S/D region on a fin structure, forming a S/D contact structure including a metal on the S/D region, forming a barrier layer including silicon and the metal on the S/D contact structure, and forming a via contact structure on the barrier layer. The barrier layer blocks a diffusion of the metal in the S/D contact structure to the via contact structure.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a source/drain (S/D) region on a fin structure;
- forming, on the S/D region, a first silicide layer;
- forming, on the first silicide layer, a S/D contact that comprises a first metal and a glue layer, wherein the first metal is in physical contact with the first silicide layer and a sidewall surface of the glue layer;
- converting a top portion of the first metal into a second silicide layer, wherein the second silicide layer is in contact with the sidewall surface of the glue layer;
- removing a portion of the second silicide layer;
- implanting the second silicide layer with silicon;
- and
- forming, on the second silicide layer, a via contact structure that comprises a second metal different from the first metal, wherein the second silicide layer blocks a diffusion of the first metal in the S/D contact to the via contact structure, and wherein the second metal is in physical contact with the second silicide layer.
A semiconductor device, comprising:
- a source/drain (S/D) region disposed on a fin structure;
- a gate structure on the fin structure and adjacent to the S/D region;
- a gate capping structure on the gate structure;
- a S/D contact disposed on the S/D region and comprising a metal, a glue layer, and a first silicide layer, wherein the metal is in physical contact with the first silicide layer;
- a second silicide layer disposed on the S/D contact and comprising the metal, wherein top surfaces of the gate capping structure, the glue layer, and the second silicide layer are coplanar;
- and
- a via contact structure disposed on the second silicide layer, wherein the second silicide layer blocks a diffusion of the metal in the S/D contact to the via contact structure.
A method, comprising:
- forming a fin structure on a substrate;
- forming a source/drain (S/D) region on the fin structure;
- forming a first silicide layer on the S/D region;
- forming, on the first silicide layer, a S/D contact comprising a metal and a glue layer;
- treating the metal to form a second silicide layer;
- forming a dielectric layer in contact with top surfaces of the glue layer and the second silicide layer;
- removing a portion of the dielectric layer and a portion of the second silicide layer to expose the second silicide layer;
- implanting the exposed second silicide layer with silicon;
- and
- forming a via contact structure on the second silicide layer, wherein the second silicide layer blocks a diffusion of the metal in the S/D contact to the via contact structure.
Dependencies are inferred from the claim text.