Epitaxial oxide high electron mobility transistor
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
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Abstract
The present disclosure describes epitaxial oxide high electron mobility transistors (HEMTs). In some embodiments, a HEMT comprises: a substrate; a template layer on the substrate; a first epitaxial semiconductor layer on the template layer; and a second epitaxial semiconductor layer on the first epitaxial semiconductor layer. The template layer can comprise crystalline metallic Al(111). The first epitaxial semiconductor layer can comprise (AlxGa1-x)yOz, wherein 0≤x≤1, 1≤y≤3, and 2≤z≤4, wherein the (AlxGa1-x)yOz comprises a Pna21 space group, and wherein the (AlxGa1-x)yOz comprises a first conductivity type formed via polarization. The second epitaxial semiconductor layer can comprise a second oxide material.
Claims17
A high electron mobility transistor (HEMT), comprising:
- a substrate;
- a template layer on the substrate, the template layer comprising crystalline metallic Al(111);
- a channel layer comprising a first epitaxial semiconductor layer on the template layer, the first epitaxial semiconductor layer comprising (AlxGa1-x)yOz, wherein 0≤x≤1, 1≤y≤3, and 2≤z≤4, wherein the (AlxGa1-x)yOz comprises a Pna21 space group;
- a gate layer comprising a second epitaxial semiconductor layer on the first epitaxial semiconductor layer, the second epitaxial semiconductor layer comprising a second oxide material;
- a source electrode and a drain electrode coupled to the channel layer;
- and
- a gate electrode coupled to the gate layer.
Dependencies are inferred from the claim text.