System and method of forming a porous low-k structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Jiun Lin, Hai-Ching Chen, Tien-I Bao
Life of this patent
Estimating the term…
Abstract
The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.
Claims20
A semiconductor device, comprising:
- a first conductive element and a second conductive element each disposed over a substrate;
- a first dielectric element disposed between the first conductive element and the second conductive element, wherein the first dielectric element contains a plurality of first porous components, and wherein a bottom surface of the first dielectric element is more elevated vertically than bottom surfaces of the first conductive element and the second conductive element;
- and
- a second dielectric element disposed over the first dielectric element and at least partially over the first conductive element and over the second conductive element, wherein the first dielectric element and the second dielectric element are different portions of a same continuous dielectric structure, wherein the second dielectric element contains a plurality of second porous components, and wherein the second porous components are each at least 5 to 10 times smaller in size than each of the first porous components.
A semiconductor device, comprising:
- a plurality of conductive elements located over a substrate, wherein the plurality of conductive elements have substantially co-planar bottom surfaces;
- a first porous dielectric structure that surrounds each of the conductive elements laterally, wherein the first porous dielectric structure contains a plurality of first porous elements;
- and
- a second porous dielectric structure that is located directly over the first porous dielectric structure and is in direct physical contact with the first porous dielectric structure, wherein the second porous dielectric structure contains a plurality of second porous elements that are smaller in size than the first porous elements by at least about 5 to 10 times.
A semiconductor device, comprising:
- a first conductive component and a second conductive component each disposed over a substrate, wherein the first conductive component and the second conductive component have substantially co-planar bottom surfaces;
- a first dielectric component disposed between the first conductive component and the second conductive component, wherein the first dielectric component contains a plurality of first porous structures;
- and
- a second dielectric component disposed over the first dielectric component, wherein the first dielectric component and the second dielectric component are component of a single continuous dielectric structure, wherein the second dielectric component contains a plurality of second porous structures that are each smaller in size than each of the first porous structures.
Dependencies are inferred from the claim text.