Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masataka Sato, Satoru Idojiri, Natsuko Takase
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Abstract
A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.
Claims18
A method for manufacturing a display device, comprising:
- a step of forming a stack over a first formation substrate;
- a step of irradiating the stack with laser light through the first formation substrate;
- a step of separating the stack and the first formation substrate;
- and
- a step of attaching a first substrate including a flexible material to a surface of the stack where the first formation substrate is separated,
- wherein the stack comprises a layer comprising a transistor and a light-emitting device, and a resin layer between the layer and the first formation substrate,
- wherein an inside of the resin layer is irradiated with the laser light at the step of irradiating the stack with the laser light, and
- wherein the number of shots of the laser light are 10 shots to 40 shots.
A method for manufacturing a display device, comprising:
- a step of forming a stack over a first formation substrate and a metal oxide layer;
- a step of irradiating the first formation substrate with at least a first shot and a second shot of laser light;
- a step of separating the stack and the first formation substrate;
- and
- a step of attaching a first substrate including a flexible material to a surface of the stack where the first formation substrate is separated,
- wherein the stack comprises a layer comprising a transistor and a light-emitting device, and a resin layer between the layer and the first formation substrate,
- wherein the metal oxide layer is positioned over the first formation substrate,
- wherein the focus of the laser light is at the interface between the resin layer and the metal oxide layer or a vicinity thereof, and
- wherein a portion overlapping with the first shot of the laser light and the second shot of the laser light is provided at the step of irradiating the first formation substrate with the laser light.
Dependencies are inferred from the claim text.