Methods and systems to enhance process uniformity
AssigneeApplied Materials, Inc.
InventorsSaravjeet Singh, Alan Tso, Jingchun Zhang, Zihui Li, Hanshen Zhang, Dmitry Lubomirsky
Life of this patent
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Abstract
A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
Claims20
A semiconductor processing chamber comprising:
- a remote plasma region;
- and
- a processing region fluidly coupled with the remote plasma region, wherein:
- the processing region is configured to house a substrate on a support pedestal,
- the support pedestal comprises aluminum at an interior region of the pedestal,
- the support pedestal defines at least one recessed ledge on which an annular member is seated,
- the recessed ledge is defined in a top surface of the support pedestal configured to support a substrate,
- the annular member is coupled with a distal portion of the pedestal and maintains contact with the pedestal along all interior surfaces of the annular member,
- the annular member extends vertically above an uppermost surface of the support pedestal,
- the uppermost surface is configured to contact the substrate, and
- the annular member comprises aluminum plated with a second material comprising nickel or platinum, wherein the second material is not disposed on surfaces of the annular member in contact with the support pedestal.
A semiconductor processing chamber comprising:
- a remote plasma region;
- and
- a processing region fluidly coupled with the remote plasma region, wherein:
- the processing region is at least partially defined by each of a showerhead, a substrate support pedestal comprising a first material, and a sidewall,
- the sidewall includes a liner on an interior chamber surface comprising a second material different from the first material, wherein the substrate support pedestal comprises a platform coupled with a stem, wherein the liner is disposed on the sidewall from the showerhead to a position in line with a location where the platform is coupled with the stem when the pedestal is in a raised operational position, and wherein the liner does not extend a full length of the sidewall defining the processing region, and
- a resistive heater is embedded in the sidewall adjacent the liner and within one inch of the showerhead.
A semiconductor processing chamber comprising:
- a remote plasma region;
- and
- a processing region fluidly coupled with the remote plasma region, wherein:
- the processing region is configured to house a substrate on a support pedestal,
- the support pedestal comprises a first material at an interior region of the pedestal,
- the support pedestal comprises an annular member coupled with a distal portion of the pedestal and extending vertically above an uppermost surface of the support pedestal to a height configured to be above a height of a substrate positioned on the support pedestal, and
- the annular member comprises the first material plated with a second material on surfaces of the annular member excluding surfaces of the annular member in contact with the support pedestal, wherein the second material comprises nickel or platinum.
Dependencies are inferred from the claim text.