Tracking and refreshing state metrics in memory sub-systems

A system comprising:

• a memory device comprising a plurality of memory blocks;
• and
• a processing device, operatively coupled with the memory device, to perform operations comprising:
• maintaining an association of a block family comprising a plurality of memory blocks, with a first bin of a set of bins, each bin of the set of bins associated with a plurality of read voltage offsets representing corrections to read signals applied to memory cells during read operations, wherein the plurality of memory blocks of the block family were programmed within a time interval not exceeding a threshold time;
• selecting a randomly chosen subset of the plurality of memory blocks of the block family for diagnostics;
• applying a first set of calibration operations to the selected subset of the plurality of memory blocks to determine a first data state metric, wherein the first set of calibration operations is performed using a first plurality of read voltage offsets associated with the first bin;
• applying a second set of calibration operations to the selected subset of the plurality of memory blocks to determine a second data state metric, wherein the second set of calibration operations is performed using a second plurality of read voltage offsets associated with a second bin;
• responsive to determining that a relation between the first data state metric and the second data state metric satisfies a predetermined condition, disassociating the block family from the first bin;
• and
• associating the block family with the second bin.

A method comprising:

• responsive to detecting a triggering event, selecting, by a processing device operatively coupled with a memory device, a family of memory blocks of the memory device, the selected family being associated with one of a set of bins, each bin associated with a plurality of read voltage offsets applied to respective base read voltages during read operations;
• performing, for one or more memory randomly chosen blocks of the selected family, a plurality of sets of calibration operations, wherein each set of calibration operations comprises obtaining an error count value that corresponds to a respective one of the set of bins and represents a number of errors detected when the plurality of read voltage offsets associated with the respective bin is applied;
• identifying a target bin by comparing the obtained error count values corresponding to the plurality of sets of calibration operations;
• and
• determining that the target bin is different from a current bin presently associated with the selected family;
• and
• associating the selected family with the target bin.