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US 11,636,909 B2Granted
Memory device and memory system controlling generation of data strobe signal based on executing a test
AssigneeSK hynix Inc.
InventorsHyun Seung Kim, Hyeong Soo Jeong
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Abstract
A memory device includes a data storage circuit configured to store, when a write operation is performed, a first internal write data and a second internal write data in a memory cell array which is accessed by an internal address, and output, when a read operation is performed, data stored in a memory cell array which is accessed by the internal address, as internal read data; and a flag generation circuit configured to generate a flag for controlling generation of a data strobe signal, based on the internal read data.
Claims9
A memory device comprising:
- an input driver configured to generate first internal write data from first write data based on a write signal;
- a test input driver comprising:
- a multiplexer configured to output selection data by selecting one of the first write data and second write data based on a test control signal;
- and
- a write buffer configured to generate second internal write data by buffering the selection data based on the write signal;
- and
- a data storage circuit configured to store the first internal write data and the second internal write data in a memory cell array which is accessed by an internal address based on the write signal, and output, when a read operation is performed, data stored in the memory cell array which is accessed by the internal address, as internal read data;
- and
- a flag generation circuit configured to generate a flag for controlling generation of a data strobe signal, based on the internal read data.
6 more elements
Dependencies are inferred from the claim text.