Memory device and method of applying operating voltage
AssigneeSK hynix Inc.
InventorSoo Yeol Chai
Life of this patent
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Abstract
Provided herein is a memory device and a method of operating the same. The memory device may include a memory block including a plurality of memory cells, and a peripheral circuit configured to apply a plurality of operating voltages to a plurality of word lines of the memory block during a program operation, wherein, during a verify operation included in the program operation, the peripheral circuit may be configured to allow a selected word line, among the plurality of word lines, to float, and may decrease a potential of the selected word line to a pre-level by decreasing potentials of adjacent word lines to the selected word line.
Claims21
A memory device, comprising:
- a memory block including a plurality of memory cells;
- and
- a peripheral circuit configured to apply a plurality of operating voltages to a plurality of word lines of the memory block during a program operation,
- wherein, during a verify operation included in the program operation, the peripheral circuit is configured to allow a selected word line, among the plurality of word lines, to float, and decrease a potential of the selected word line to a pre-level by decreasing potentials of adjacent word lines to the selected word line.
A memory device, comprising:
- a memory block including a plurality of memory cells;
- and
- a peripheral circuit configured to apply a plurality of operating voltages to a plurality of word lines of the memory block during a read operation,
- wherein, during the read operation, the peripheral circuit is configured to allow a selected word line, among the plurality of word lines, to float, and decrease a potential of the selected word line to a pre-level by decreasing potentials of adjacent word lines to the selected word line.
A memory device, comprising:
- a memory block including a plurality of memory cells;
- and
- a peripheral circuit configured to apply a plurality of operating voltages to a plurality of word lines of the memory block during a read operation,
- wherein, during the read operation, the peripheral circuit is configured to allow a selected word line, among the plurality of word lines, to float, and increase a potential of the selected word line to a first pre-level by increasing potentials of adjacent word lines to the selected word line.
A method of operating a memory device, comprising:
- applying a program voltage to a selected word line and applying a first pass voltage to adjacent word lines to the selected word line;
- decreasing a potential of the selected word line to a first level;
- allowing the selected word line to float;
- and
- decreasing, while the selected word line is floating, potentials of the adjacent word lines by applying a second pass voltage that is lower than the first pass voltage by a set voltage to the adjacent word lines,
- wherein a potential of the floating selected word line is set to a pre-level lower than the first level based on coupling with the adjacent word lines.
A method of operating a memory device, comprising:
- applying a first pass voltage to a plurality of word lines;
- decreasing a potential of a selected word line, among the plurality of word lines, to a first level;
- allowing the selected word line to float;
- and
- decreasing, while the selected word line is floating, potentials of adjacent word lines to the selected word line, among the plurality of word lines, by applying a second pass voltage that is lower than the first pass voltage by a set voltage to the adjacent word lines,
- wherein a potential of the floating selected word line is set to a pre-level lower than the first level based on coupling with the adjacent word lines.
A method of operating a memory device, comprising:
- applying a first read voltage to a selected word line and applying a first pass voltage to adjacent word lines to the selected word line;
- allowing the selected word line to float, and increasing a potential of the floating selected word line to a first pre-level higher than the first read voltage by applying a second pass voltage higher than the first pass voltage to the adjacent word lines;
- and
- applying a second read voltage higher than the first read voltage to the selected word line.
Dependencies are inferred from the claim text.