Peak current and program time optimization through loop dependent voltage ramp target and timing control

A method of controlling a non-volatile memory device that includes a plurality of memory cells respectively electrically coupled to a plurality of bit lines and includes control circuitry coupled to the plurality of memory cells and configured to program the memory cells in a programming operation that includes a plurality of program loops, the method comprising the steps of:

• counting the program loops to establish a loop count of a sequence of programming loops to complete the programming operation;
• precharge in two phases at least one bit line of the plurality of bit lines that is coupled to memory cells to be inhibited from further programming, the two phases including a current restricted phase and a current unrestricted phase;
• and
• in at least one program loop, transitioning from the current restricted phase of precharge to the current unrestricted phase of precharge in response to a voltage applied to the bit lines coupled to the memory cells to be inhibited from further programming exceeding a target voltage, and
• setting the target voltage to a first lower target voltage if a position of the loop count is in a beginning section of the sequence of programming loops, set the target voltage to a higher target voltage value if the position of the loop count is in a middle section of the sequence of programming loops, and set the target voltage to a second lower target voltage value if the position of the loop count is in an ending section of the sequence of programming loops.

An apparatus, comprising:

• a memory device including a plurality of memory cells that are electrically coupled to a plurality of bit lines;
• a controller coupled to the plurality of memory cells and to the plurality of bit lines and configured to program the memory cells in a plurality of program loops, the controller being further configured to:
• maintain a loop count of a sequence of programming loops to complete programming;
• set a target voltage to a first lower target voltage if a position of the loop count is in a beginning section of the sequence of programming loops, set the target voltage to a higher target voltage value if the position of the loop count is in a middle section of the sequence of programming loops, and set the target voltage to a second lower target voltage if the position of the loop count is in an ending section of the sequence of programming loops;
• and
• precharge at least one of the plurality of bit lines that is coupled to at least one of the plurality of memory cells that is programmed in a first phase where current is controlled until a voltage applied to the at least one of the plurality of bit lines surpasses the target voltage that is based on the loop count.