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US 11,636,887 B2Granted
Semiconductor device having dummy lines electrically connected with each other
AssigneeSK hynix Inc.
InventorsByung In Kang, Nak Kyu Park, Han Kyu Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a memory bank, an X-decoder adjacent to the memory bank in a row direction, a Y-decoder adjacent to the memory bank in a column direction, X-lines extending from the X-decoder across the memory bank in the row direction, Y-lines extending from the Y-decoder across the memory bank in the column direction, and a plurality of connection lines.
Claims17
A semiconductor device comprising:
- a memory bank;
- an X-decoder adjacent to the memory bank in a row direction;
- a Y-decoder adjacent to the memory bank in a column direction;
- X-lines extending from the X-decoder across the memory bank in the row direction;
- Y-lines extending from the Y-decoder across the memory bank in the column direction;
- and
- a plurality of connection lines,
- wherein:
- the memory bank includes:
- a plurality of cell mats arranged in a matrix of a plurality of rows and a plurality of columns,
- a plurality of sub word line drivers disposed between the plurality of cell mats in the plurality of rows, and
- a plurality of bit line sense amplifiers disposed between the plurality of cell mats in the plurality of columns,
- wherein:
- the X-lines include a dummy line pair and word lines, and lines in the dummy line pair and the word lines extend in the row direction and traverse the cell mats and the sub word line drivers disposed in a row, and
- the Y-lines include bit lines that traverse the cell mats and the bit line sense amplifiers in the column direction, and
- wherein the plurality of connection lines includes:
- an edge connection line that electrically connects the lines of the dummy line pair with each other in an edge area of the memory bank;
- and
- an inner connection line that connects the lines of the dummy line pair with each other in the X-decoder.
16 more elements
A semiconductor device comprising:
- a first memory bank;
- a first X-decoder adjacent to the first memory bank in a row direction;
- first X-lines extending from the first X-decoder across the first memory bank in the row direction;
- a first edge connection line disposed in an edge area of the first memory bank;
- and
- a first inner connection line electrically connecting a first upper dummy line to a first lower dummy line in the first X-decoder,
- wherein:
- the first memory bank includes:
- a plurality of first cell mats and a plurality of first sub word line drivers alternately arranged in the row direction,
- the first X-lines that extend across a row of the plurality of first cell mats and the plurality of first sub word line drivers alternately arranged include the first upper dummy line, the first lower dummy line, and first word lines disposed between the first upper dummy line and the first lower dummy line, and
- the first edge connection line electrically connects the first upper dummy line to the first lower dummy line.
8 more elements
A semiconductor device comprising:
- a memory bank;
- an X-decoder adjacent to the memory bank in a row direction;
- X-lines extending from the X-decoder across the memory bank in the row direction;
- and
- a connection line,
- wherein:
- the memory bank includes a plurality of cell mats and a plurality of sub word line drivers alternately arranged in the row direction,
- the X-lines include an upper dummy line, a lower dummy line, and a plurality of word lines disposed between the upper dummy line and the lower dummy line, and
- the upper dummy line, the lower dummy line, and the plurality of word lines traverse a row of the cell mats and the sub word line drivers alternately arranged in the row direction,
- wherein the connection line includes:
- an inner connection line electrically connecting the upper dummy line to the lower dummy line in the X-decoder, and
- an edge connection line electrically connecting the upper dummy line to the lower dummy line in an edge area of the memory bank.
9 more elements
Dependencies are inferred from the claim text.