Memory devices with user-defined tagging mechanism
AssigneeMicron Technology, Inc.
InventorsAaron S. Yip, Theodore T. Pekny
Life of this patent
Estimating the term…
Abstract
A memory device includes a memory array with memory blocks each having a plurality of memory cells, and one or more current monitors configured to measure current during post-deployment operation of the memory device; and a controller configured to identify a bad block within the memory blocks based on the measured current, and disable the bad block for preventing access thereof during subsequent operations of the memory device.
Claims20
A memory device, comprising:
- memory blocks configured to store data;
- and
- a controller coupled to the memory blocks, the controller configured to:
- identify a bad block within the memory blocks during post-deployment operation of the memory device;
- and
- implement a reset read before a read command for interrupting prolonged inactivity for one or more of the memory blocks associated with the read command;
- wherein
- the controller and/or the memory blocks is/are configured to isolate the bad block from a non-zero bias voltage associated with accessing the data.
A memory system, comprising:
- a host device;
- and
- a memory device coupled to the host device, wherein:
- the memory device includes memory blocks configured to store data, and
- the memory device is configured to:
- identify a bad block within the memory blocks during post-deployment operation, and
- prevent access to the bad block during subsequent data operations;
- implement a reset read before a read command for interrupting prolonged inactivity for one or more of the memory blocks associated with the read command.
A method of operating a memory device including a controller and a memory array that includes memory blocks each having a plurality of memory cells, the method comprising:
- identifying a bad block within the memory blocks;
- preventing access to the bad block during subsequent data operations;
- and
- implementing a reset read when an elapsed time measured from last access to a memory location exceeds a threshold.
Dependencies are inferred from the claim text.