Integrated assemblies having shield lines between neighboring transistor active regions

An integrated assembly, comprising:

• conductive lines supported by a base and extending along a first direction;
• some of the conductive lines being digit lines and at least two of the conductive lines being shield-connection-lines;
• semiconductor pillars over the digit lines;
• each of the semiconductor pillars comprising a channel region between an upper source/drain region and a lower source/drain region;
• the lower source/drain regions being coupled with the digit lines;
• storage elements coupled with the upper source/drain regions;
• wordlines extending along a second direction which crosses the first direction;
• the wordlines including gate regions adjacent the channel regions;
• shield lines extending along the second direction;
• each of the shield lines being coupled with an associated one of the shield-connection-lines;
• and
• each of the semiconductor pillars having a first side proximate an associated one of the wordlines, and having a second side proximate an associated one of the shield lines.

An integrated assembly, comprising:

• conductive lines supported by a base and extending along a first direction;
• some of the conductive lines being digit lines and one of the conductive lines being a shield-connection-line;
• the conductive lines all comprising a same material as one another and all comprising a same height as one another;
• vertically-extending pillars over the digit lines;
• each of the vertically-extending pillars comprising a channel region between an upper source/drain region and a lower source/drain region;
• the lower source/drain regions being coupled with the digit lines;
• storage elements coupled with the upper source/drain regions;
• wordlines extending along a second direction which crosses the first direction;
• the wordlines including gate regions adjacent the channel regions;
• and
• shield lines extending along the second direction;
• each of the shield lines being coupled with the shield-connection-line.

An integrated assembly, comprising:

• digit lines supported by a base and extending along a first direction;
• at least one shield-connection-line supported by the base and extending along the first direction;
• transistor active regions over the digit lines;
• each of the active regions comprising a channel region between an upper source/drain region and a lower source/drain region;
• the lower source/drain regions being coupled with the digit lines;
• capacitors coupled with the upper source/drain regions;
• wordlines extending along a second direction which crosses the first direction;
• the wordlines including gate regions adjacent the channel regions, the upper source/drain region having an upper surface elevationally above an uppermost surface of the wordlines;
• and
• shield lines extending along the second direction;
• the shield lines being above the digit lines and being coupled with one or more of said at least one shield-connection-lines.