US 11,636,324 B2 · Gaussian synapses for probabilistic neural networks

Abstract

Embodiments relate to a Gaussian synapse device configured so that its transfer characteristics resemble a Gaussian distribution. Embodiments of the Gaussian synapse device include an n-type field-effect transistor (FET) and p-type FET with a common contact so that the two FETs are connected in series. Some embodiments include a global back-gate contact and separate top-gate contact to obtain dual-gated FETs. Some embodiments include two different 2D materials used in the channel to generate the two FETs, while some embodiments use a single ambipolar transport material. In some embodiments, the dual-gated structure is used to dynamically control the amplitude, mean and standard deviation of the Gaussian synapse. In some embodiments, the Gaussian synapse device can be used as a probabilistic computational device (e.g., used to form a probabilistic neural network).

Claims19

Dependent claims

A Gaussian synapse device, comprising:

a substrate having a source contact and a drain contact;
two channels formed between the source contact and the drain contact;
wherein:
the source contact connects to a p-type channel;
the drain contact connects to an n-type channel;
the p-type and n-type channels are connected in series;
a common contact
a first channel formed between the source contact and the common contact,
forming a p-type field-effect transistor (FET);
and
a second channel formed between the drain contact and the common contact, forming an n-type FET.

8 more elements

Dependencies are inferred from the claim text.

Gaussian synapses for probabilistic neural networks

Life of this patent

Gaussian synapses for probabilistic neural networks

Life of this patent

Abstract

Claims19