Computational metrology based sampling scheme
AssigneeASML Netherlands B.V.
InventorsWim Tjibbo Tel, Yichen Zhang, Sarathi Roy
Life of this patent
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Abstract
A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
Claims20
A method for generating a metrology sampling scheme for a patterning process, the method comprising:
- obtaining data comprising a parameter map of values of a parameter corresponding to a first metrology sampling scheme for a substrate subject to the patterning process, the parameter map generated by modelling and/or simulation from measured data obtained using the first metrology sampling scheme and from other apparatus or substrate data measured or recorded during processing of the substrate subject to the patterning process;
- identifying, by a hardware computer system, a contributor of the parameter map;
- removing, by the hardware computer system, a contribution of the contributor to the parameter map to generate a residual map;
- and
- generating a second metrology sampling scheme based on the residual map, wherein the second metrology sampling scheme is configured to distribute sampling points on a subsequent substrate so as to improve a metrology sampling density.
A computer program product comprising a non-transitory computer readable medium having computer-readable instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
- obtain data comprising a parameter map of values of a parameter corresponding to a first metrology sampling scheme for a substrate subject to a patterning process, the parameter map generated by modelling and/or simulation from measured data obtained using the first metrology sampling scheme and from other apparatus or substrate data measured or recorded during processing of the substrate subject to the patterning process;
- identify a contributor of the parameter map;
- remove a contribution of the contributor to the parameter map to generate a residual map;
- and
- generate a second metrology sampling scheme based on the residual map, wherein the second metrology sampling scheme is configured to distribute sampling points on a subsequent substrate so as to improve a metrology sampling density.
Dependencies are inferred from the claim text.