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US 11,635,663 B2Granted
Display device and transistor
AssigneeJapan Display Inc.
InventorYoshitaka Ozeki
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a display device includes a display panel and a drive circuit. A transistor provided in a pixel portion or a peripheral portion of the display panel includes a semiconductor layer having a first end and a second end, first and second gate electrodes overlapping the semiconductor layer, a source electrode connected to the first end, and a drain electrode connected to the second end. The first and second gate electrodes are disposed in a first layer. The source electrode and the drain electrode are disposed in a second layer. The source electrode is formed to cover at least a first channel region in planar view. The drain electrode is formed to cover at least a second channel region in planar view.
Claims18
A display device comprising:
- a display panel comprising a pixel portion where a plurality of pixels is disposed and a peripheral portion provided around the pixel portion;
- and
- a drive circuit that is provided in the peripheral portion and is configured to drive the pixel, wherein
- a transistor is provided in the pixel portion or the peripheral portion, the transistor comprises a semiconductor layer having a first end and a second end, a first gate electrode overlapping the semiconductor layer at a position closer to the first end, a second gate electrode overlapping the semiconductor layer between the first gate electrode and the second end, a source electrode connected to the first end, and a drain electrode connected to the second end,
- the first and second gate electrodes are disposed in a first layer,
- the source electrode and the drain electrode are disposed in a second layer different from the first layer,
- the source electrode is formed to cover at least a first channel region that is an overlapping region of the first gate electrode and the semiconductor layer in planar view,
- the drain electrode is formed to cover at least a second channel region that is an overlapping region of the second gate electrode and the semiconductor layer in planar view,
- an insulating film consisting of a single layer is disposed between the semiconductor layer and the second layer, and
- the source electrode is formed to cover a whole of the first channel region.
7 more elements
A transistor comprising:
- a semiconductor layer having a first end and a second end;
- a first gate electrode overlapping the semiconductor layer at a position closer to the first end;
- a second gate electrode overlapping the semiconductor layer at a position closer to the second end;
- a source electrode connected to the first end;
- and
- a drain electrode connected to the second end, wherein
- the first and second gate electrodes are disposed in a first layer,
- the source electrode and the drain electrode are disposed in a second layer different from the first layer,
- the source electrode is formed to cover at least a first channel region that is an overlapping region of the first gate electrode and the semiconductor layer in planar view,
- the drain electrode is formed to cover at least a second channel region that is an overlapping region of the second gate electrode and the semiconductor layer in planar view, and
- an insulating film consisting of a single layer is disposed between the semiconductor layer and the second layer, and
- the source electrode is formed to cover a whole of the first channel region.
9 more elements
A display device comprising:
- a display panel comprising a pixel portion where a plurality of pixels are disposed and a peripheral portion provided around the pixel portion;
- and
- a drive circuit that is provided in the peripheral portion and is configured to drive the pixels, wherein
- a transistor is provided in the pixel portion or the peripheral portion, the transistor comprises a semiconductor layer having a first end and a second end, a first gate electrode overlapping the semiconductor layer at a position closer to the first end, a second gate electrode overlapping the semiconductor layer between the first gate electrode and the second end, a source electrode connected to the first end, and a drain electrode connected to the second end,
- the first and second gate electrodes are disposed in a first layer,
- the source electrode and the drain electrode are disposed in a second layer different from the first layer,
- the source electrode is formed to cover at least a first channel region that is an overlapping region of the first gate electrode and the semiconductor layer in planar view,
- the drain electrode is formed to cover at least a second channel region that is an overlapping region of the second gate electrode and the semiconductor layer in planar view,
- an insulating film consisting of a single layer is disposed between the semiconductor layer and the second layer, and
- the drain electrode is formed to cover a whole of the second channel region.
7 more elements
A transistor comprising:
- a semiconductor layer having a first end and a second end;
- a first gate electrode overlapping the semiconductor layer at a position closer to the first end;
- a second gate electrode overlapping the semiconductor layer at a position closer to the second end;
- a source electrode connected to the first end;
- and
- a drain electrode connected to the second end, wherein
- the first and second gate electrodes are disposed in a first layer,
- the source electrode and the drain electrode are disposed in a second layer different from the first layer,
- the source electrode is formed to cover at least a first channel region that is an overlapping region of the first gate electrode and the semiconductor layer in planar view,
- the drain electrode is formed to cover at least a second channel region that is an overlapping region of the second gate electrode and the semiconductor layer in planar view,
- an insulating film consisting of a single layer is disposed between the semiconductor layer and the second layer, and
- the drain electrode is formed to cover a whole of the second channel region.
9 more elements
Dependencies are inferred from the claim text.