Memory temperature controlling method and memory temperature controlling system
AssigneeHefei Core Storage Electronic Limited
InventorsBiao Zhang, Weikang Wang, Hai Han, Jun Liang, Ren Jun Tang
Life of this patent
Estimating the term…
Loading patent…
AssigneeHefei Core Storage Electronic Limited
InventorsBiao Zhang, Weikang Wang, Hai Han, Jun Liang, Ren Jun Tang
Estimating the term…
A memory temperature controlling method and a memory temperature controlling system are provided. The method includes: performing, by a testing equipment, test modes on a memory storage device, and obtaining a first internal temperature of a memory control circuit unit, a second internal temperature of each memory package and a surface temperature of each memory package to establish a linear relationship expression of the first internal temperature, the second internal temperature and the surface temperature; using, by the memory storage device, the linear relationship expression to calculate a predicted surface temperature of a rewritable non-volatile memory based on a first current internal temperature of the memory control circuit unit and a second current internal temperature of each memory package; adjusting, by the memory storage device, an operating frequency for accessing the rewritable non-volatile memory based on the predicted surface temperature.
A memory temperature controlling method, adapted for a memory storage device, the memory storage device comprising a memory control circuit unit and a rewritable non-volatile memory module, the rewritable non-volatile memory module comprising a plurality of memory packages, and the method comprising:
A memory temperature controlling system, comprising:
Dependencies are inferred from the claim text.