Production method of monocrystalline silicon based on an emissivity of a production apparatus
AssigneeSumco Corporation
InventorsShinichi Kawazoe, Toshirou Kotooka, Yuuji Tsutsumi
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Abstract
A production method of monocrystalline silicon includes: measuring an emissivity of an inner wall surface of a top chamber; and determining a target resistivity of monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon. In determining the target emissivity on a crystal center axis at a position for starting formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is 0.4 or less, the target resistivity is determined to be less than a resistivity value of 3.0 mΩ·cm when the dopant is arsenic.
Claims8
A production method of monocrystalline silicon using a monocrystalline silicon production machine comprising:
- a crucible configured to store a dopant-added melt comprising a silicon melt added with an n-type dopant in a form of arsenic, phosphorus, or antimony;
- a main chamber that houses the crucible;
- and a top chamber that covers an upper side of the main chamber, wherein
- a resistivity of the monocrystalline silicon is from 1.5 mΩ·cm to 25 mΩ·cm when the dopant is arsenic, from 0.5 mΩ·cm to 25 mΩ·cm when the dopant is phosphorus, and from 8 mΩ·cm to 40 mΩ·cm when the dopant is antimony,
- the method comprising:
- measuring an emissivity of an inner wall surface of the top chamber;
- and
- determining a target resistivity of the monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon, wherein
- in determining the target emissivity on a crystal center axis at a position for starting a formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is equal to or less than a first reference value, the target resistivity is determined to be less than a predetermined set resistivity,
- the first reference value of the emissivity is 0.4, and
- the predetermined set resistivity is 3.0 mΩ·cm when the dopant is arsenic, 1.7 mΩ·cm when the dopant is phosphorus, and 15 mΩ·cm when the dopant is antimony.
A production method of monocrystalline silicon using a monocrystalline silicon production machine comprising:
- a crucible configured to store a dopant-added melt comprising a silicon melt added with an n-type dopant in a form of arsenic, phosphorus, or antimony;
- a main chamber that houses the crucible;
- and a top chamber that covers an upper side of the main chamber, wherein
- a resistivity of the monocrystalline silicon is from 1.5 mΩ·cm to 25 mΩ·cm when the dopant is arsenic, from 0.5 mΩ·cm to 25 mΩ·cm when the dopant is phosphorus, and from 8 mΩ·cm to 40 mΩ·cm when the dopant is antimony,
- the method comprising:
- measuring an emissivity of an inner wall surface of the top chamber;
- and
- determining a target resistivity of the monocrystalline silicon based on the emissivity measured in the measuring, thereby producing the monocrystalline silicon, wherein
- in determining the target emissivity on a crystal center axis at a position for starting a formation of a straight body of the monocrystalline silicon in the producing, when the emissivity is more than a first reference value and 0.8 or less, the target resistivity is determined to be equal to or more than a predetermined set resistivity,
- the first reference value of the emissivity is 0.4, and
- the predetermined set resistivity is 3.0 mΩ·cm when the dopant is arsenic, 1.7 mΩ·cm when the dopant is phosphorus, and 15 mΩ·cm when the dopant is antimony.
Dependencies are inferred from the claim text.