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US 11,634,832 B2Granted
Plating system and method of plating wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Lung Hou, Ming-Hsien Lin
Life of this patent
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Abstract
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
Claims20
A plating system, comprising:
- an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
- an inlet configured to introduce plating solution into the plating region of the electroplating chamber;
- and
- an outlet configured to remove the plating solution from the plating region of the electroplating chamber;
- a barrier configured to inhibit removal of the plating solution from the plating region;
- a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region;
- and
- a sensor configured to sense a parameter of a plating process whereby the wafer is plated with anode material of an anode within the electroplating chamber, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter.
5 more elements
A plating system, comprising:
- an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
- an inlet configured to introduce plating solution into the plating region of the electroplating chamber;
- and
- an outlet configured to remove the plating solution from the plating region of the electroplating chamber;
- a high resistance virtual anode (HRVA) within the electroplating chamber;
- a barrier, overlying the HRVA, configured to inhibit removal of the plating solution from the plating region;
- a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region;
- and
- a sensor configured to sense a parameter of a plating process whereby the wafer is plated with anode material of an anode within the electroplating chamber, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter.
6 more elements
A plating system, comprising:
- an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
- an inlet configured to introduce plating solution into the plating region of the electroplating chamber;
- and
- an outlet configured to remove the plating solution from the plating region of the electroplating chamber;
- an anode within the electroplating chamber, wherein:
- an opening in the anode overlies the inlet of the electroplating chamber;
- and
- anode material from the anode is transferred from the anode to the wafer during a plating process;
- a pump configured to conduct the plating solution into the plating region of the electroplating chamber via the inlet of the electroplating chamber;
- a high resistance virtual anode (HRVA) within the electroplating chamber, wherein:
- the HRVA is over the anode;
- the HRVA is a porous structure through which the plating solution flows;
- and
- the HRVA comprises non-conductive material;
- a barrier, overlying the HRVA, configured to inhibit removal of the plating solution from the plating region;
- a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region;
- and
- a sensor configured to sense a parameter of a plating process whereby the wafer is plated with the anode material of the anode, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter.
15 more elements
Dependencies are inferred from the claim text.